Vertical capacitors and methods of forming the same
US8853821B2 · kind B2 · utility
2Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.