Horizontal-cavity surface-emitting laser
US8855160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2010 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Apr 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.