Single-crystal manufacturing apparatus and single-crystal manufacturing method
US8858706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2010 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal manufacturing apparatus according to the Czochralski method, including: a crucible that contains a raw material; a main chamber configured to accommodate a heater for heating and melting the raw material; and a pulling chamber configured to pull and accommodate a grown single crystal, the pulling chamber being continuously provided above the main chamber; an inner shield provided between the heater and the main chamber and for insulating heat radiated from the heater, and a supporting member for supporting the inner shield from below. The inner shield is supported at three or more supporting points contacting the supporting member, and a lower end of the inner shield except at the supporting points does not contact the supporting member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.