Method for producing nickel-containing films
US8859045B2 · kind B2 · utility
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6References
20Claims
0Family size
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Key dates
| Filing date | Jul 23, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Apr 20, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F17/00
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I):wherein R1 is t-butyl and each R2 is each independently any C1-C3 alkyl group; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.