Pattern forming method, positional deviation measuring method and photomask
US8859167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70533
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a positional deviation measuring method includes measuring a positional deviation of a device pattern formed in a lower layer portion using an alignment mark of the lower layer portion as a reference; measuring a positional deviation of a device pattern formed in an upper layer portion above the lower layer portion using an alignment mark of the upper layer portion as a reference; measuring a positional deviation between the alignment mark of the lower layer portion and the alignment mark of the upper layer portion; and calculating a positional deviation between the device patterns based on the positional deviation between the alignment marks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.