Patent · US Active

Light emitting diodes and associated methods of manufacturing

US8859305B2 · kind B2 · utility

1Cited by
7References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 2010
Grant dateOct 14, 2014
Priority date
Expiry dateDec 2, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825

Abstract

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.