Scott E. Sills
236Patents
16h-index
88Co-inventors
85Inventor score
Filing activity: Oct 5, 2007 → Feb 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8021897B2 | Methods of fabricating a cross point memory array | Electricity | 140 | Active |
| US9397145B1 | Memory structures and related cross-point memory arrays, electronic systems, and methods of forming memory structures | Electricity | 49 | Active |
| US8652909B2 | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells | Electricity | 40 | Active |
| US8431458B2 | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells | Electricity | 31 | Active |
| US9728584B2 | Three dimensional memory array with select device | Electricity | 23 | Active |
| US9553263B1 | Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems | Electricity | 22 | Active |
| US8900963B2 | Methods of forming semiconductor device structures, and related structures | Electricity | 22 | Active |
| US10297290B1 | Semiconductor devices, and related control logic assemblies, control logic devices, electronic systems, and methods | Electricity | 21 | Active |
| US9842839B1 | Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above | Electricity | 20 | Active |
| US10741382B2 | Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures thereof | Electricity | 19 | Active |
| US8273634B2 | Methods of fabricating substrates | Electricity | 18 | Active |
| US9269432B2 | Memory systems and memory programming methods | Physics | 17 | Active |
| US8247302B2 | Methods of fabricating substrates | Electricity | 17 | Active |
| US10366983B2 | Semiconductor devices including control logic structures, electronic systems, and related methods | Electricity | 16 | Active |
| US9105320B2 | Memory devices and methods of operating the same | Physics | 16 | Active |
| US8796155B2 | Methods of fabricating substrates | Electricity | 16 | Active |
| US8039399B2 | Methods of forming patterns utilizing lithography and spacers | Electricity | 13 | Active |
| US8207557B2 | Cross-point memory structures | Electricity | 13 | Active |
| US8598562B2 | Memory cell structures | Electricity | 13 | Active |
| US9252188B2 | Methods of forming memory cells | Electricity | 12 | Active |
| US9330932B1 | Methods of fabricating features associated with semiconductor substrates | Electricity | 11 | Active |
| US9853211B2 | Array of cross point memory cells individually comprising a select device and a programmable device | Electricity | 11 | Active |
| US8530939B2 | Cross-point memory structures | Electricity | 10 | Active |
| US10355002B2 | Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry | Electricity | 10 | Active |
| US8217557B2 | Solid state lights with thermosiphon liquid cooling structures and methods | Electricity | 10 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.