Method for manufacturing a non-volatile semiconductor memory device
US8859327B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
According to one embodiment, a non-volatile semiconductor memory device includes: a semiconductor substrate; a plurality of first lines; a plurality of second lines; and a plurality of non-volatile memory cells arranged at positions where the plurality of first lines intersect with the plurality of second lines, wherein each of the plurality of non-volatile memory cells includes a resistance change element and a rectifying element connected in series to the resistance change element, and a resistance change film continuously extending over the plurality of second lines is arranged between the plurality of first lines and the plurality of second lines, and the resistance change element includes a portion where the first line intersect with the second line in the resistance change film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.