Semiconductor device incorporating a multi-function layer into gate stacks
US8859368B2 · kind B2 · utility
396Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Sep 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Approaches are provided for forming a semiconductor device (e.g., a FET) having a multi-function layer (e.g., niobium carbide (NbC)) that serves as a work function layer and a gate metal layer in gate stacks of solid state applications. By introducing a single layer with multiple functions, total number of layers that needs processing (e.g., recessing) may be decreased. As such, the complexity of device integration and resulting complications may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.