Method for growing a nitride-based III-V group compound semiconductor
US8859401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2011 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Aug 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.