Methods of forming conductive structures using a dual metal hard mask technique

US8859418B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Torsten Huisinga · Dresden, DE
• Jens Hahn · Dresden, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: Jan 11, 2012
• Grant date: Oct 14, 2014
• Expiry date: Jan 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are various methods of forming conductive structures, such as conductive lines and vias, using a dual metal hard mask integration technique. In one example, the method includes forming a first layer of insulating material, forming a first patterned metal hard mask layer above the first layer of insulating material, forming a second patterned metal hard mask layer above the first patterned metal hard mask layer, performing at least one etching process through both of the second patterned metal hard mask layer and the first patterned metal hard mask layer to define a trench in the first layer of insulating material and forming a conductive structure in the trench.