Etching method
US8859434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2011 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Jul 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.