Low noise hybridized detector using charge transfer
US8860083B1 · kind B1 · utility
40Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.