High electron mobility transistor and method of manufacturing the same
US8860089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Jan 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.