Metallic sub-collector for HBT and BJT transistors
US8860092B1 · kind B1 · utility
6Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2008 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Oct 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.