FinFET-compatible metal-insulator-metal capacitor

US8860107B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Wilfried E. Haensch · Somers, US
• Pranita Kulkarni · Slingerlands, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Jun 3, 2010
• Grant date: Oct 14, 2014
• Expiry date: Jul 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

At least one semiconductor fin for a capacitor is formed concurrently with other semiconductor fins for field effect transistors. A lower conductive layer is deposited and lithographically patterned to form a lower conductive plate located on the at least one semiconductor fin. A dielectric layer and at least one upper conductive layer are formed and lithographically patterned to form a node dielectric and an upper conductive plate over the lower conductive plate as well as a gate dielectric and a gate conductor over the other semiconductor fins. The lower conductive plate, the node dielectric, and the upper conductive plate collectively form a capacitor. The finFETs may be dual gate finFETs or trigate finFETs. A buried insulator layer may be optionally recessed to increase the capacitance. Alternately, the lower conductive plate may be formed on a planar surface of the buried insulator layer.