Nonvolatile charge trap memory device having a high dielectric constant blocking region

US8860122B1 · kind B1 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Igor Polishchuk · Fremont, US
• Sagy Levy · Jerusalem, IL

Key dates

• Filing date: May 24, 2011
• Grant date: Oct 14, 2014
• Expiry date: May 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/00

Abstract

A nonvolatile charge trap memory device is described. The device includes a substrate having a channel region and a pair of source and drain regions. A gate stack is above the substrate over the channel region and between the pair of source and drain regions. The gate stack includes a high dielectric constant blocking region.