Tunneling field effect transistor and method for forming the same

US8860140B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Renrong Liang · Beijing, CN
• Ning Cui · Beijing, CN
• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN

Key dates

• Filing date: Jun 24, 2011
• Grant date: Oct 14, 2014
• Expiry date: Oct 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6739

Abstract

The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.