High-K gate dielectric with work function adjustment metal layer
US8860143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2011 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Aug 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an interfacial layer is formed between the substrate and the gate dielectric layer, and an energy of bond between a metal atom in the metal-containing adjusting layer and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer or the interfacial layer and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.