Semiconductor device, semiconductor device manufacturing method, and electronic device
US8860211B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulation layer, a first semiconductor element and a second semiconductor element which are disposed within the insulation layer, a frame which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, and a wiring layer which is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.