Integrated inductor
US8860544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Oct 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated inductor includes a winding consisting of an aluminum layer atop a passivation layer, wherein the aluminum layer does not extend into the passivation layer and has a thickness that is not less than about 2.0 micrometers. The passivation layer has a thickness not less than about 0.8 micrometers. By eliminating copper from the integrated inductor and increasing the thickness of the passivation layer, the distance between the bottom surface of the inductor structure and the main surface of the semiconductor substrate is increased, thus the parasitic substrate coupling may be reduced and the Q-factor may be improved. Besides, the increased thickness of the aluminum layer may help improve the Q-factor as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.