Finfet transistor circuit
US8863063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first gate level feature forms gate electrodes of a first finfet transistor of a first transistor type and a first finfet transistor of a second transistor type. A second gate level feature forms a gate electrode of a second finfet transistor of the first transistor type. A third gate level feature forms a gate electrode of a second finfet transistor of the second transistor type. The gate electrodes of the second finfet transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second finfet transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first finfet transistors of the first and second transistor types are positioned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.