Apparatus and method for processing substrate
US8864936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Feb 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20235
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.