Method for manufacturing semiconductor devices having a glass substrate
US8865522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2013 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Apr 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.