LED having a low defect N-type layer that has grown on a silicon substrate
US8865565B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2011 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | May 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.