Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

US8866126B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Hiroaki Ohta · Wako, JP
• Feng Wu · Lake Zurich, US
• Anurag Tyagi · Kirkland, US
• Arpan Chakraborty · Goleta, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US
• Erin C. Young · Lompoc, US

Key dates

• Filing date: May 29, 2013
• Grant date: Oct 21, 2014
• Expiry date: May 29, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.