Nonvolatile semiconductor memory device
US8866139B2 · kind B2 · utility
11Cited by
3References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer; a charge storage film that is formed on the first insulating film, includes C60 fullerenes, and is not less than 0.5 monolayer but is less than 1.0 monolayer; a second insulating film formed on the charge storage film; and a control electrode formed on the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.