Vertical GaN power device with breakdown voltage control
US8866148B2 · kind B2 · utility
3Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a vertical GaN power device includes providing a first GaN material having a first conductivity type and forming a second GaN material having a second conductivity type and coupled to the first GaN material to create a junction. The method further includes implanting ions through the second GaN material and into a first portion of the first GaN material to increase a doping concentration of the first conductivity type. The first portion of the junction is characterized by a reduced breakdown voltage relative to a breakdown voltage of a second portion of the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.