Patent assignee · US · COMPANY

Avogy, Inc.

77Patents
76Active
77Granted
52Portfolio score

Filing activity: Aug 4, 2011 → Sep 14, 2015 · 2 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9368582B2 High power gallium nitride electronics using miscut substrates Electricity 22 Active
US8947154B1 Method and system for operating gallium nitride electronics Electricity 7 Active
US8716078B2 Method and system for a gallium nitride vertical JFET with self-aligned gate metallization Electricity 6 Active
USD762573S1 Power supply General 5 Active
US8749015B2 Method and system for fabricating floating guard rings in GaN materials Electricity 5 Active
US8698164B2 Vertical GaN JFET with gate source electrodes on regrown gate Electricity 5 Active
US8823140B2 GaN vertical bipolar transistor Electricity 5 Active
US8569153B2 Method and system for carbon doping control in gallium nitride based devices Electricity 5 Active
US8916871B2 Bondable top metal contacts for gallium nitride power devices Electricity 4 Active
US9117839B2 Method and system for planar regrowth in GAN electronic devices Electricity 4 Active
US8716716B2 Method and system for junction termination in GaN materials using conductivity modulation Electricity 4 Active
US8592298B2 Fabrication of floating guard rings using selective regrowth Electricity 4 Active
US8927999B2 Edge termination by ion implantation in GaN Electricity 3 Active
US9184305B2 Method and system for a GAN vertical JFET utilizing a regrown gate Electricity 3 Active
US9059199B2 Method and system for a gallium nitride vertical transistor Electricity 3 Active
US8969180B2 Method and system for junction termination in GaN materials using conductivity modulation Electricity 3 Active
US8866148B2 Vertical GaN power device with breakdown voltage control Electricity 3 Active
US8643134B2 GaN-based Schottky barrier diode with field plate Electricity 3 Active
US8969912B2 Method and system for a GaN vertical JFET utilizing a regrown channel Electricity 3 Active
USD728475S1 Power supply General 3 Active
US8981432B2 Method and system for gallium nitride electronic devices using engineered substrates Electricity 2 Active
US8941117B2 Monolithically integrated vertical JFET and Schottky diode Electricity 2 Active
US9105579B2 GaN power device with solderable back metal Electricity 2 Active
US8841708B2 Method and system for a GAN vertical JFET with self-aligned source metallization Electricity 2 Active
US8946788B2 Method and system for doping control in gallium nitride based devices Electricity 2 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.