Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof

US8866189B2 · kind B2 · utility

Assignee

• SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. · CN

Inventors

• Jun Hu · Shanghai, CN
• Jing Shi · Beijing, CN
• Wensheng Qian · Shanghai, CN
• Donghua Liu · Shanghai, CN
• Wenting Duan · Shanghai, CN
• Fan Chen · Shanghai, CN
• Tzuyin CHIU · Shanghai, CN

Key dates

• Filing date: Nov 20, 2012
• Grant date: Oct 21, 2014
• Expiry date: Apr 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed.