Semiconductor device
US8866194B2 · kind B2 · utility
0Cited by
21References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 24, 2007 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a p+ diffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter layer and a charge transport prevention film formed between the n-type collector layer and the n-type emitter layer and having an effect as a potential barrier with respect to either electrons or holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.