Integrated circuit device and method for manufacturing same
US8866206B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a plurality of fins on an upper surface of a semiconductor substrate and extending in a first direction, a device isolation insulating film placed between the fins, a gate electrode extending in a second direction crossing the first direction on the insulating film; and an insulating film insulating the fin from the gate electrode. In a first region where a plurality of the fins are consecutively arranged, an upper surface of the device isolation insulating film is located at a first position below an upper end of the fin. In a second region located in the second direction as viewed from the first region, the upper surface of the device isolation insulating film is located at a second position above the upper end of the fin. In the second region, the device isolation insulating film covers entirely a side surface of the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.