Field effect transistor with alternate electrical contacts

US8866225B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Frédéric Mayer · Hoover, US
• Laurent Clavelier · Grenoble, FR
• Thierry Poiroux · Voiron, FR
• Gérard Billiot · Damiette, FR

Key dates

• Filing date: Jun 19, 2008
• Grant date: Oct 21, 2014
• Expiry date: May 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

A field effect transistor including: a support layer, a plurality of active zones based on a semiconductor, each active zone configured to form a channel and arranged between two gates adjacent to each other and consecutive, the active zones and the gates being arranged on the support layer, each gate including a first face on the side of the support layer and a second face opposite the first face. The second face of a first of the two gates is electrically connected to a first electrical contact made on the second face of the first of the two gates, and the first face of a second of the two gates is electrically connected to a second electrical contact passing through the support layer. The gates of the transistor are not electrically connected to each other.