Semiconductor device with staggered oxide-filled trenches at edge region

US8866255B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Stephan Voss · Munich, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Dec 17, 2009
• Grant date: Oct 21, 2014
• Expiry date: May 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area.