Stephan Voss
38Patents
2h-index
63Co-inventors
56Inventor score
Filing activity: Aug 31, 2006 → Aug 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7989888B2 | Semiconductor device with a field stop zone and process of producing the same | Electricity | 7 | Active |
| US9825023B2 | Insulated gate bipolar transistor comprising negative temperature coefficient thermistor | Electricity | 5 | Active |
| US9979187B2 | Power device with overvoltage arrester | Electricity | 2 | Active |
| US9041120B2 | Power MOS transistor with integrated gate-resistor | Electricity | 2 | Active |
| US9508812B2 | Semiconductor device | Electricity | 2 | Active |
| US8866255B2 | Semiconductor device with staggered oxide-filled trenches at edge region | Electricity | 2 | Active |
| US9917181B2 | Bipolar transistor with superjunction structure | Electricity | 2 | Active |
| US9899377B2 | Insulated gate semiconductor device with soft switching behavior | Electricity | 1 | Active |
| US9985017B2 | Semiconductor device comprising a clamping structure | Electricity | 1 | Active |
| US9704712B1 | Method of making a semiconductor device formed by thermal annealing | Electricity | 1 | Active |
| US11742215B2 | Methods for forming a semiconductor device | Electricity | 1 | Active |
| US8343862B2 | Semiconductor device with a field stop zone and process of producing the same | Electricity | 1 | Active |
| US9859272B2 | Semiconductor device with a reduced band gap zone | Electricity | 1 | Active |
| US9224806B2 | Edge termination structure with trench isolation regions | Electricity | 1 | Active |
| US10143450B2 | System with photonic biopsy device for obtaining pathological information | Human Necessities | 1 | Active |
| US10038052B2 | Semiconductor device with channelstopper and method for producing the same | Electricity | 1 | Active |
| US11081544B2 | Method of manufacturing a semiconductor device comprising first and second field stop zone portions | Electricity | 0 | Active |
| US10249746B2 | Bipolar transistor with superjunction structure | Electricity | 0 | Active |
| US9754787B2 | Method for treating a semiconductor wafer | Electricity | 0 | Active |
| US9390883B2 | Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing | Electricity | 0 | Active |
| US10340264B2 | Semiconductor device comprising a clamping structure | Electricity | 0 | Active |
| US12211703B2 | Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer | Electricity | 0 | Active |
| US10177230B2 | Semiconductor device including at least one type of deep-level dopant | Electricity | 0 | Active |
| US12218029B2 | Semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips | Electricity | 0 | Active |
| US10342416B2 | Medical probe with multi-fiber lumen | Human Necessities | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.