Silicon nanotube MOSFET

US8866266B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel Tekleab · Wappingers Falls, US
• Hung H. Tran · Chicago, US
• Jeffrey W. Sleight · Ridgefield, US
• Dureseti Chidambarrao · Weston, US

Key dates

• Filing date: Nov 6, 2013
• Grant date: Oct 21, 2014
• Expiry date: Nov 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/63
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated by spacers surrounding the tubular inner and outer gates.