Daniel Tekleab
8Patents
4h-index
18Co-inventors
46Inventor score
Filing activity: Jul 7, 2010 → Oct 14, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8871576B2 | Silicon nanotube MOSFET | Electricity | 9 | Active |
| US8866266B2 | Silicon nanotube MOSFET | Electricity | 7 | Active |
| US8237197B2 | Asymmetric channel MOSFET | Electricity | 7 | Active |
| US8298897B2 | Asymmetric channel MOSFET | Electricity | 6 | Active |
| USRE45955E1 | Dual high-K oxides with SiGe channel | General | 3 | Active |
| US9595555B2 | Pixel isolation regions formed with conductive layers | Electricity | 1 | Active |
| US9812489B2 | Pixels with photodiodes formed from epitaxial silicon | Electricity | 0 | Active |
| US10002895B2 | Apparatus and methods for buried channel transfer gate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.