Patent · US Active

Bonding process and bonded structures

US8866289B2 · kind B2 · utility

0Cited by
12References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 5, 2012
Grant dateOct 21, 2014
Priority date
Expiry dateJan 5, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on the wafers to be sealed off when wafers are bonded together. The material in the strips is a material bonding the semiconductor wafers together and sealing off the monolithically integrated components when subjected to force and optionally heating. A monolithically integrated electrical and/or mechanical and/or fluidic and/or optical device including a first substrate and a second substrate, bonded together with the sealing and bonding structure, and a method of providing a sealing and bonding material structure on at least one of two wafers and applying a force and optionally heat to the wafers to join them are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.