Systems and methods for a thin film capacitor having a composite high-K thin film stack
US8867189B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.