Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber

US8871312B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jennifer Y. Sun · Mountain View, US
• Kenneth S. Collins · San Jose, US
• Ren-Guan Duan · Fremont, US
• Senh Thach · Union City, US
• Thomas Graves · Los Altos, US
• Xiaoming He · Arcadia, US
• Jie Yuan · San Jose, US

Key dates

• Filing date: Sep 10, 2012
• Grant date: Oct 28, 2014
• Expiry date: Sep 10, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.