Gas barrier film, electronic device including the same, gas barrier bag, and method for producing gas barrier film
US8871350B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jul 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1352
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the “I” represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the “I”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.