Compositions and processes for immersion lithography
US8871428B2 · kind B2 · utility
2Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2012 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Sep 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.