Methods for fabricating phase change memory devices
US8871559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Oct 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Provided is a method for fabricating a phase change memory device. The method includes forming a plurality of bottom electrodes on a substrate, forming a first mold layer on the substrate to extend in a first direction where the bottom electrodes are exposed, forming a second mold layer on the substrate, the second mold layer extending in a second direction orthogonal to the first direction to expose parts of the bottom electrodes, forming a phase change material layer on the first and second mold layers to be connected to parts of the bottom electrodes dividing the phase change material layer as a plurality of phase change layers respectively connected to the parts of the bottom electrodes and forming a plurality of top electrodes on the phase change layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.