Semiconductor light-emitting device and method of manufacturing the same
US8872205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.