Integrated gate runner and field implant termination for trench devices

US8872278B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Jifa Hao · Scarborough, US
• Gary M. Dolny · Smethport, US
• Mark Rioux · Saco, US

Key dates

• Filing date: Oct 25, 2011
• Grant date: Oct 28, 2014
• Expiry date: Mar 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

In one general aspect, an apparatus can include a plurality of trench metal-oxide-semiconductor field effect transistors (MOSFET) devices formed within an epitaxial layer of a substrate, and a gate-runner trench disposed around the plurality of trench MOSFET devices and disposed within the epitaxial layer. The apparatus can also include a floating-field implant defined by a well implant and disposed around the gate-runner trench.