Metal gate structure and fabrication method thereof
US8872286B2 · kind B2 · utility
2Cited by
21References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.