Nonvolatile semiconductor memory device
US8873289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Word lines extend in a first direction and are commonly connected to memory cells in a plurality of NAND cell units. Bit lines extend in a second direction crossing to the first direction and connected to one ends of the NAND cell units. In one block, both a first and a second NAND cell unit are connected to one of the bit lines. A bit-line-side select transistor in the first NAND cell unit and a source-line-side select transistor in the second NAND cell unit are disposed adjacently to each other. The source-line-side select transistor in the first NAND cell unit and the bit-line-side select transistor in the second NAND cell unit are disposed adjacently to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.