Thin film capacitors on metal foils and methods of manufacturing same
US8875363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49163
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650° C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.