Method for enhancing a substrate using gas cluster ion beam processing
US8877299B2 · kind B2 · utility
4Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2009 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.