Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate
US8877539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.